Method of manufacturing package structure

ABSTRACT

A method of manufacturing a package structure includes the following processes. A carrier is provided. An adhesive layer is formed on the carrier. A die is attached to the carrier through the adhesive layer. An encapsulant is formed over the carrier to laterally encapsulate the die. A polymer material is formed over the carrier along a surface of the adhesive layer, a surface of the encapsulant and a top surface of the die. A first portion of the polymer material directly on an edge of the carrier has a first thickness larger than a second thickness of a second portion of the polymer material directly on the top surface of the die. A redistribution layer is formed to penetrate through the second portion of the polymer layer and electrically connect to the die.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of and claims thepriority benefit of a prior application Ser. No. 16/675,227, filed onNov. 6, 2019, now allowed. The prior application Ser. No. 16/675,227 isa divisional application of and claims the priority benefit of U.S.application Ser. No. 15/846,232, filed on Dec. 19, 2017, U.S. Pat. No.10,522,440B2. The U.S. application Ser. No. 15/846,232 claims thepriority benefit of U.S. provisional application Ser. No. 62/582,331,filed on Nov. 7, 2017. The entirety of the above-mentioned patentapplication is hereby incorporated by reference herein and made a partof this specification.

BACKGROUND

The semiconductor industry has experienced rapid growth due tocontinuous improvements in the integration density of various electroniccomponents (i.e., transistors, diodes, resistors, capacitors, etc.). Forthe most part, this improvement in integration density has come fromcontinuous reductions in minimum feature size, which allows more of thesmaller components to be integrated into a given area. These smallerelectronic components also demand smaller packages that utilize lessarea than previous packages. Some smaller types of packages forsemiconductor components include quad flat packages (QFPs), pin gridarray (PGA) packages, ball grid array (BGA) packages, flip chips (FC),three-dimensional integrated circuits (3DICs), wafer level packages(WLPs), and package on package (PoP) devices and so on.

Currently, integrated fan-out packages are becoming increasingly popularfor their compactness.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A to FIG. 1I are schematic cross-sectional views illustrating amethod of forming a package structure according to a first embodiment ofthe disclosure.

FIG. 2A to FIG. 2G are schematic cross-sectional views illustrating amethod of forming a package structure according to a second embodimentof the disclosure.

FIG. 3A to FIG. 3D are top views illustrating a method of forming apackage structure according to some embodiments of the disclosure.

FIG. 4A and FIG. 4B illustrate examples of the protection layer and theencapsulant of a package structure according to some embodiments of thedisclosure.

FIG. 5 illustrates an example of a package structure according to someembodiments of the disclosure.

FIG. 6 is a flow chart of forming a package structure according to someembodiments of the disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a second feature over or on a first feature in the description thatfollows may include embodiments in which the second and first featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the second and first features,such that the second and first features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath”, “below”, “lower”,“on”, “above”, “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the FIG.s. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe FIG.s. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Other features and processes may also be included. For example, testingstructures may be included to aid in the verification testing of the 3Dpackaging or 3DIC devices. The testing structures may include, forexample, test pads formed in a redistribution layer or on a substratethat allows the testing of the 3D packaging or 3DIC, the use of probesand/or probe cards, and the like. The verification testing may beperformed on intermediate structures as well as the final structure.Additionally, the structures and methods disclosed herein may be used inconjunction with testing methodologies that incorporate intermediateverification of known good dies to increase the yield and decreasecosts.

FIG. 1A to FIG. 1I are schematic cross-sectional views illustrating amethod of forming a package structure according to a first embodimentsof the disclosure. FIG. 3A to FIG. 3D are top views illustrating amethod of forming a package structure according to some embodiments ofthe disclosure. In some embodiments, FIGS. 1A to 1D are respectively thecross-sectional views along A-A′ line in FIGS. 3A to 3D.

Referring to FIG. 1A and FIG. 3A, a carrier 10 is provided. The carrier10 may be a glass carrier, a ceramic carrier, or the like. In someembodiments, as shown in FIG. 3A, the carrier 10 has a same shape as awafer, such as rounded. A de-bonding layer 11 is formed on the carrier10 by, for example, a spin coating method. In some embodiments, the sizeof the de-bonding layer 11 is slightly larger than the size of thecarrier 10, so as to cover the top surface and sidewalls of the carrier10. The de-bonding layer 11 may be formed of an adhesive such as anUltra-Violet (UV) glue, a Light-to-Heat Conversion (LTHC) glue, or thelike, or other types of adhesives, for example. The de-bonding layer 11is decomposable under the heat of light to thereby release the carrier10 from the overlying structures that will be formed in subsequentsteps.

Referring to FIG. 1A and FIG. 3A, an adhesive layer 12 is formed on thede-bonding layer 11. The adhesive layer 12 includes die attach film(DAF), silver paste, or the like. In some embodiments, the adhesivelayer 12 extends on the whole carrier 10, the size of the adhesive layer12 is substantially equal to the size of the carrier 10. In someembodiments, the adhesive layer 12 covers a portion of the top surfaceof the de-bonding layer 11. In some embodiments, the sidewall and thecorner of the de-bonding layer 11 is not covered by the adhesive layer12, but exposed.

Referring to FIG. 1A, in some embodiments, the carrier 10 includes anedge region 10 a (or referred as edge) and a die-attach region 10 b. Theedge 10 a refers to a region adjacent to the end of the carrier 10, andhas no die attached thereon in the subsequently process. In someembodiments, the width W1 of the edge 10 a ranges from 1 mm to 10 mm.The die-attach region 10 b refers to a region having one or more diesattached thereon in the subsequent process.

Still referring to FIG. 1A and FIG. 3A, one or more dies 18 are attachedto the carrier 10 through the adhesive layer 12. The dies 18 are placedon the die-attach region 10 b of the carrier 10. In some embodiments,the die 18 is one of a plurality of dies cut apart from a wafer, forexample. The die 18 may be an application-specific integrated circuit(ASIC) chip, an analog chip, a sensor chip, a wireless and radiofrequency chip, a voltage regulator chip or a memory chips, for example.The number of the die 18 shown in FIG. 1A and FIG. 3C is merely forillustration, and the disclosure is not limited thereto. As shown inFIG. 3A, in some embodiments, a plurality of dies 18 are mounted on thecarrier 10 and may be arranged as an array, the dies 18 may be the sametypes of dies or the different types of dies. In some embodiments, theheight H (or referred as thickness) of the die 18 ranges from 500 μm to900 μm, for example. In some embodiments, the height H of the die 18 isgreater than or equal to 600 μm.

Referring to FIG. 1A, in some embodiments, the die 18 includes asubstrate 13, a plurality of pads 14, a passivation layer 15, aplurality of connectors 16 and a passivation layer 17. The pads 14 maybe a part of an interconnection structure (not shown) and electricallyconnected to the active devices, passive devices or integrated circuitdevices (not shown) formed on the substrate 13. The passivation layer 15is formed over the substrate 13 and covers a portion of the pads 14. Aportion of the pads 14 is exposed by the passivation layer 15 and servesas an external connection of the die 18. The connectors 16 are formed onand electrically connected to the pads 14 not covered by the passivationlayer 15. The connector 16 includes solder bumps, gold bumps, copperbumps, copper posts, copper pillars, or the like. The passivation layer17 is formed over the passivation layer 15 and aside the connectors 16to cover the sidewalls of the connectors 16. The passivation layers 15and 17 respectively include an insulating material such as siliconoxide, silicon nitride, polymer, or a combination thereof. The materialsof the passivation 15 and the passivation layer 17 may be the same ordifferent. In some embodiments, the top surface of the passivation layer17 is substantially level with the top surface of the connectors 16.

The die 18 has a first surface 18 a (or referred as front surface) and asecond surface 18 b (or referred as back surface) opposite to eachother. The first surface 18 a is an active surface of the die 18. Insome embodiments, the first surface 18 a is formed of the top surface ofthe passivation layer 17 and the top surfaces of the connectors 16. Thesecond surface 18 b is a surface of the substrate 13. In someembodiments, as shown in FIG. 1A, the first surface 18 a of the die 18is upward, and the second surface 18 b of the die 18 is attached to theadhesive layer 12, but the disclosure is not limited thereto. In someother embodiments, the first surface 18 a of the die 18 is attached tothe adhesive layer 12, and the second surface 18 b of the die 18 isupward (not shown).

Referring to FIG. 1B and FIG. 3B, in some embodiments, a protectionlayer 19 is formed over the edge 10 a of the carrier 10, so as to coverthe adhesive layer 12 on the edge 10 a of the carrier 10. The materialof the protection layer 19 is different from the adhesive layer 12. Insome embodiments, the protection layer 19 includes an inorganicmaterial, an organic material, or a combination thereof. The inorganicmaterial is, for example, silicon oxide, silicon nitride, siliconoxynitride, or a combination thereof. The organic dielectric materialincludes polymer, such as polybenzoxazole (PBO), polyimide (PI),benzocyclobutene (BCB), a combination thereof, or the like. Theprotection layer 19 may be formed by suitable fabrication technique,such as a spin-coating process, but the disclosure is not limitedthereto. In some embodiments, after the spin-coating process isperformed, a soft-bake process is further performed. The thickness T1and the width W2 of the protection layer 19 may be adjusted bycontrolling the process condition (such as spin speed) of the spincoating process. In some embodiments, the thickness T1 of the protectionlayer 19 ranges from 5 μm to 20 μm. In an exemplary embodiment, thethickness T1 of the protection layer 19 is about 5.8 μm. The width W2 ofthe protection layer 19 may be less than, equal to, or slightly largerthan the width W1 of the edge 10 a of the carrier 10.

Still referring to FIG. 1B and FIG. 3B, in some embodiments, theprotection layer 19 covers a portion of the top surface of the adhesivelayer 12 on the edge 10 a of the carrier 10, and is not in contact withthe die 18. In other words, a gap 20 is existed between the protectionlayer 19 and the die 18, exposing a portion of the top surface of theadhesive layer 12, but the disclosure is not limited thereto. Thesidewalls of the protection layer 19 may be straight or inclined. Theprotection layer 19 may be any shape, as long as it at least covers thesidewall and a portion of the top surface of the adhesive layer 12 onthe edge 10 a of the carrier 10.

Referring to FIG. 1C and FIG. 3C, an encapsulant material layer 21 isformed over the carrier 10 and the die(s) 18, at least encapsulatingsidewalls and top surfaces of the die 18, and the top surface of theadhesive layer 12 exposed by the gap 20. In some embodiments, thematerial of the encapsulant material layer 21 is different from thematerial of the protection layer 19. In some other embodiments, thematerial of the encapsulant material layer 21 is the same as thematerial of the material of the protection layer 19. In someembodiments, the encapsulant material layer 21 includes a moldingcompound, a molding underfill, a resin such as epoxy, a combinationthereof, or the like. In some embodiments, the encapsulant materiallayer 21 includes a photo-sensitive material such as PBO, PI, BCB, acombination thereof, or the like, which may be easily patterned byexposure and development processes. In alternative embodiments, theencapsulant material layer 21 includes nitride such as silicon nitride,oxide such as silicon oxide, phosphosilicate glass (PSG), borosilicateglass (BSG), boron-doped phosphosilicate glass (BPSG), a combinationthereof, or the like. The encapsulant material layer 21 is formed by asuitable fabrication technique such as molding, spin-coating,lamination, deposition, or similar processes. In some embodiments inwhich the encapsulant material layer 21 is formed by molding orspin-coating, a curing process is further performed after the molding orspin-coating is performed.

In some embodiments, the area of the encapsulant material layer 21 isless than the area of the carrier 10. That is to say, a portion of theedge 10 a of the carrier 10 is not covered by the encapsulant materiallayer 21. The encapsulant material layer 21 is formed with a shape thesame as or different from the shape of the carrier 10 from the top view.

Referring to FIG. 1D and FIG. 3D, thereafter, a planarization process isperformed to remove a portion of the encapsulant material layer 21, suchthat the first surface 18 a of the die 18 are exposed, and anencapsulant 21 a is formed. The planarization process includes agrinding process, a polishing process such as chemical mechanicalpolishing process, or the like, for example. In some embodiments, thetop surface of the encapsulant 21 a is level with the first surface 18 aof the die 18. In some embodiments in which the second surface 18 b ofthe die 18 is upward, a portion of the substrate 13 of the die 18 may beremoved during the planarization process, such that the height H of thedie 18 is reduced (not shown). In some embodiments, the height H of thedie 18 may be reduced by 10 μm to 20 μm.

Referring to FIG. 1D, the encapsulant 21 a is disposed over the carrier10 and aside the die 18, encapsulating the sidewalls of the die 18. Insome embodiments, the sidewall of the encapsulant 21 a is inclined, butthe disclosure is not limited thereto. In some other embodiments, thesidewall of the encapsulant 21 a may be straight (FIG. 4A). In someembodiments in which the encapsulant material layer 21 is formed by amolding process, the shape of the encapsulant 21 a is dependent on themold used in the molding process.

In some embodiments in which the gap 20 is existed between theprotection layer 19 and the die 18, the encapsulant 21 a fills in thegap 20, so as to cover the top surface of the adhesive layer 12 exposedby the gap 20. In some embodiments, the encapsulant 21 a also covers asidewall and a portion of the top surface of the protection layer 19. Inother words, a portion of the protection layer 19 is sandwiched betweenthe encapsulant 21 a and the adhesive layer 12. The adhesive layer 12 onthe edge 10 a of the carrier 10 is completely covered by and in contactwith the protection layer 19 and the encapsulant 21 a, and the sidewallof the die 18 is encapsulated by the encapsulant 21 a. In someembodiments, the bottom surface of protection layer 19, the bottomsurface of the encapsulant 21 a and the bottom surface of the die 18 arecoplanar with each other, but the disclosure is not limited thereto. Thestructural characteristics of the protection layer 19 and theencapsulant 21 a are not limited to those described above.

FIG. 4A and FIG. 4B illustrate examples of the protection layer and theencapsulant of a package structure according to some other embodimentsof the disclosure.

Referring to FIG. 4A, in some embodiments, the top surface of theprotection layer 19 is not covered by the encapsulant 21 a.Specifically, the encapsulant 21 a fills in the gap 20 to cover the topsurface of the adhesive layer 12 exposed by the gap 20, and contactswith a sidewall of the protection layer 19. The top surface of theadhesive layer 12 on the edge 10 a of the carrier 10 is completelycovered by the protection layer 19 and the encapsulant 21 a. Thesidewall of the protection layer 19 and the sidewall of the encapsulant21 a shown in FIG. 4A are straight, but the disclosure is not limitedthereto. In some other embodiments, the sidewall of the protection layer19 and the sidewall of the encapsulant 21 a in this example may also beinclined (not shown).

Referring to FIG. 4B, in some other embodiments, the protection layer 19further extends to contacts with a portion of the sidewall of the die18, that is, no gap is existed between the protection layer 19 and thedie 18. The encapsulant 21 a is formed on the protection layer 19,contacting with and encapsulating another portion of the sidewall of thedie 18. A portion of the protection layer 19 is sandwiched between theencapsulant 21 a and the adhesive layer 12. In other words, theencapsulant 21 a is separated from the adhesive layer 12 by theprotection layer 19 therebetween. The adhesive layer 12 on the edge 10 aof the carrier 10 is completely covered by and in contact with theprotection layer 19. The sidewall of the die 18 is covered by theprotection layer 19 and the encapsulant 21 a.

Referring to FIG. 1D, FIG. 4A and FIG. 4B, the protection layer 19 andthe encapsulant 21 a may have inclined sidewall or straight sidewall.The width of the protection layer 19 may be adjusted by controlling theprocess condition as described above. Actually, the shapes, the sizes ofthe protection layer 19 and the encapsulant 21 a, and how much theprotection layer 19 is covered by the encapsulant 21 a are not limitedto those shown in FIGS. 1D, 3D, 4A and 4B, as long as the adhesive layer12 on the edge 10 a of the carrier 10 is completely covered by theprotection layer 19 or/and the encapsulant 21 a.

Referring to FIG. 1E, thereafter, a polymer layer PM1 is formed over thecarrier 10 and the die 18. In some embodiments, the material of thepolymer layer PM1 may be the same as or different from the material ofthe protection layer 19. In some embodiments, the polymer layer PM1includes a photo-sensitive material such as PBO, PI, BCB, a combinationthereof or the like. The polymer layer PM1 may be formed by a suitablefabrication technique, such as chemical vapor deposition, spin coating,or lamination.

In some embodiments in which the polymer layer PM1 is formed by a spincoating process, the spin coating process is performed at a high spinspeed. In some embodiments, the spin speed ranges from 2000 rpm to 3000rpm. The thickness T2 of the polymer layer PM1 is dependent on the spinspeed. In some embodiments, the thickness T2 of the polymer layer PM1ranges from 3 μm to 10 μm. In some other embodiments, the thickness T2of the polymer layer PM1 ranges from 4 μm to 6 μm. Herein, the thicknessT2 referred to the thickness of the portion (that is, the horizontalportion) of the polymer layer PM1 on the first surface 18 a of the die18 and on the top surface of the protection layer 19. In someembodiments, the thickness of the polymer layer PM1 on the sidewall ofthe encapsulant 21 a is not uniform. For example, the polymer layer PM1has a thicker region at the bottom of the sidewall of the encapsulant 21a, and has a thinner region on the middle region or a region adjacent tothe middle region of the sidewall of the encapsulant 21 a. In anexemplary embodiment, the thickness T3 of the polymer layer PM1 in thethicker region is about 20 μm.

In some embodiments in which the protection layer 19 comprises a similarmaterial (such as, polymer) as that of the polymer layer PM1, thethickness of the polymer on the adhesive layer 12 over the edge 10 a ofthe carrier 10 (that is, the sum of the thickness of the polymer layerPM1 and the thickness of the protection layer 19) is thicker than thepolymer on the first surface 18 a of the die 18 (that is, the thicknessof the polymer layer PM1).

Still referring to FIG. 1E, in some embodiments in which the spincoating process is performed at a high spin speed to form the polymerlayer PM1, the polymer layer PM1 may include a defect region 24 over theedge 10 a of the carrier 10. The defect region 24 is an opening exposinga portion of the top surface of the protection layer 19. In someembodiments, the position and the structural characteristics of thedefect region 24 are related to spin speed and the shape of theencapsulant 21 a. The specific position, the size, the shape and thenumber of the defect region 24 shown in FIG. 1E are merely forillustration, and the disclosure is not limited thereto. The adhesivelayer 12 on the edge 10 a of the carrier 10 is completed covered andprotected by the protection layer 19 and the encapsulant 21 a, theadhesive layer 12 is not exposed by the defect region 24. Therefore, theproblem that may occur due to exposed adhesive layer in the subsequentprocesses is avoided.

Referring to FIG. 1F and FIG. 1G, a redistribution layer RDL1 includinga seed layer 26 a and a conductive layer 28 is then formed on thepolymer layer PM1. The redistribution layer RDL1 penetrates through thepolymer layer PM1 and is electrically connected to the connectors 16 ofthe die 18. In some embodiments, the redistribution layer RDL1 is formedby the processes described as below.

Referring to FIG. 1F, after the polymer layer PM1 is formed, a pluralityof openings 25 is formed in the polymer layer PM1 by, for example, alaser drilling process, exposure and development processes, for example.The openings 25 expose portions of the top surfaces of the connectors 16of the die 18.

A seed layer 26 is then formed on the polymer layer PM1 by, for example,physical vapor deposition. The seed layer 26 is, for example, a copperseed layer or other metal seed layers. The seed layer 26 fills in theopenings 25 and is in electrical contact with the connectors 16 of thedie 18. In some embodiments, the seed layer 26 also fills in the defectregion 24. In some other embodiments, the defect region 24 of thepolymer layer PM1 is not completely filled with the seed layer 26, and aportion of the top surface of the protection layer 19 is still exposedby the defect region 24 after the seed layer 26 is formed.

Still referring to FIG. 1F, thereafter, a patterned mask layer 27 isformed over the carrier 10. The patterned mask layer 27 has a pluralityof openings 27 a, exposing a portion of the seed layer 26 in theopenings 25 and on the top surface of the polymer layer PM1. Theconductive layer 28 is then formed on the seed layer 26 exposed by theopenings 27 a through, for instance, an electroplating process. In someembodiments, the conductive layer 28 includes copper or other suitablemetals.

Referring to FIG. 1F and FIG. 1G, the patterned mask layer 27 is removedby, for example, an ashing process or a stripping process. The seedlayer 26 not covered by the conductive layer 28 is removed by an etchingprocess with the conductive layer 28 as a mask, and a seed layer 26 aunderlying the conductive layer 28 is formed. The seed layer 26 a andthe conductive layer 28 form the redistribution layer RDL1.

In the embodiments of the disclosure, because the protection layer 19 isformed at least over the edge 10 a of the carrier 10, and the adhesivelayer 12 on the edge 10 a of the carrier 10 is completely covered andprotected by the protection layer 19 or/and the encapsulant 21 a,therefore, when the polymer layer PM1 is formed with a defect region 24in some embodiments, the adhesive layer 12 is protected and not exposedby the defect region 24, and the problem may occur due to the exposedadhesive layer in the defect region 24 is avoided. The details aredescribed as below.

If the protection layer 19 is not formed, during the processes offorming the polymer layer PM1 and the redistribution layer RDL1, theadhesive layer 12 on the edge 10 a of the carrier 10 may be exposed bythe defect region 24, and may be damaged by the strip chemical used inthe stripping process of the patterned mask layer 27. Specifically, inthe cases that no protection layer is formed, a portion of the adhesivelayer 12 exposed by the defect region 24 may be dissolved and removed bythe strip chemical when stripping the patterned mask layer 27, while aportion of the adhesive layer 12 may be not dissolved completely, butform some undissolved adhesive residue apart from the surface of thede-bonding layer 11, and may drop on the seed layer 26, leading to aportion of the seed layer 26 not covered by the conductive layer 28 iscovered by the undissolved adhesive residue during the removal processof the seed layer 26 described above. In other words, the undissolvedadhesive residue serves as a mask of the seed layer 26 during theremoval process of the seed layer 26. As a result, a portion of the seedlayer 26 not covered by the conductive layer 28 is remained and forms aseed layer residue, which may affect the following processes and thereliability of the device. Compared to the cases that no protectionlayer is formed, the problem described above is avoided in theembodiments of the disclosure.

Referring to FIG. 1G and FIG. 1H, in some embodiments, after the polymerlayer PM1 and the redistribution layer RDL1 are formed, polymer layersPM2, PM3, PM4, and redistribution layers RDL2, RDL3 and RDL4 stackedalternately are formed. The number of the polymer layers or theredistribution layers is not limited by the disclosure. Theredistribution layer RDL2 penetrates through the polymer layer PM2 andis electrically connected to the redistribution layer RDL1. Theredistribution layer RDL3 penetrates through the polymer layer PM3 andis electrically connected to the redistribution layer RDL2. Theredistribution layer RDL4 penetrates through the polymer layer PM4 andis electrically connected to the redistribution layer RDL3. Thestructural characteristics of the polymer layers PM2, PM3, PM4 and theredistribution layers RDL2, RDL3, RDL4 are substantially the same asthose of the polymer layer PM1 and the redistribution layer RDL1. Insome embodiments, the materials and the forming method of polymer layersPM2, PM3, PM4 and the redistribution layers RDL2, RDL3 and RDL4 aresimilar to or different from those of the polymer layer PM1 and theredistribution layer RDL1. It is mentioned that, for the sake ofbrevity, only a portion of the redistribution layer RDL1 on theconnectors 16 of the die 18 is shown in FIG. 1G, and the seed layer 26 aand the conductive layer 28 of RDL1 are not specifically shown in FIG.1H.

In some embodiments, the redistribution layers RDL1, RDL2, RDL3 and RDL4respectively includes a plurality of vias V and a plurality of traces Tconnected to each other. The vias V penetrates through the polymerlayers PM1, PM2, PM3 and PM4 to connect the traces T of theredistribution layers RDL1, RDL1, RDL3 and RDL 4, and the traces T arerespectively located on the polymer layers PM1, PM2, PM3 and PM4, andare respectively extending on the top surface of the polymer layers PM1,PM2, PM3 and PM4.

Referring to FIG. 1H, the polymer layers PM1, PM2, PM3, PM4 and theredistribution layers RDL1, RDL2, RDL3, RDL4 form a RDL structure 30electrically connected to the die 18. In some embodiments, theredistribution layer RDL4 is also referred as an under-ball metallurgy(UBM) layer for ball mounting.

Thereafter, a plurality of connectors 32 are formed on redistributionlayer RDL4 of the RDL structure 30. In some embodiments, the connectors32 are referred as conductive terminals. The connectors 32 areelectrically connected to the die 18 through the RDL structure 30. Insome embodiments, the connectors 32 are made of a conductive materialwith low resistivity, such as Sn, Pb, Ag, Cu, Ni, Bi or an alloythereof, and are formed by a suitable process such as ball placementprocess and reflow process. In alternative embodiments, the connectors32 may be controlled collapse chip connection (i.e. C4) bumps formed bya C4 process.

Referring to FIG. 1H, a structure 50 is thus completed. The structure 50includes the carrier 10, the die 18 attached to the carrier 10 thoughthe adhesive layer 12, the encapsulant 21 a, the protection layer 19,the RDL structure 30 and the connectors 32. The adhesive layer 12 on theedge 10 a of the carrier 10 is completely covered and protected by theprotection layer 19 and the encapsulant 21 a. A portion of theprotection layer 19 is sandwiched between the encapsulant 21 a and theadhesive layer 12. For the sake of brevity, the inclined portion of theencapsulant 21 a, a portion of the edge 10 a adjacent to the end of thecarrier 10 and the layers thereon are not shown in FIG. 1H. It isunderstood that in the embodiments in which a plurality of dies 18 areplaced on the carrier 10, the die 18 shown in FIG. 1H is the dieadjacent to the edge 10 a of the carrier 10.

Referring to FIG. 1H and FIG. 1I, in some embodiments, the structure 50is turned over, the de-bonding layer 11 is decomposed under the heat oflight, and the carrier 10 is then released from the structure 50. Insome embodiments, the adhesive layer 12 is then removed by a cleanprocess, and the second surface 18 b of the die 19 is exposed. A packagestructure 50 a is thus completed. In some embodiments in which aplurality of dies 18 is formed over the carrier 10 in the forgoingprocess, after the carrier 10 is released, the package structure (notshown) may be singulated by a die-saw process to form a plurality ofidentical package structures 50 a as illustrated in FIG. 1I, andportions of the layers on the edge 10 a of the carrier 10 are removedduring the die-saw process.

It is mentioned that, for the sake of brevity, only one sidewall of thedie 18 adjacent to the edge 10 a of the carrier 10 and the encapsulant21 a thereaside are shown in FIGS. 1A to 1G. In FIGS. 1H and 1I, twosidewalls of the die 18 and encapsulant 21 a thereaside are shown.Specifically, the die 18 has a first sidewall 38 a and a second sidewall38 b. The first sidewall 38 a is the sidewall shown in FIGS. 1A to 1G.The second sidewall 38 b is opposite to the first sidewall 38 a, and notshown in FIGS. 1A to 1G.

The encapsulant 21 a includes a first encapsulant 21 a 1 and a secondencapsulant 21 a 2. The first encapsulant 21 a 1 is aside the firstsidewall 38 a of the die 18. The second encapsulant 21 a 2 is aside thesecond sidewall 38 b of the die 18. The first encapsulant 21 a 1 and thesecond encapsulant 21 a 2 are asymmetrical with each other. In someembodiments, the first encapsulant 21 a 1 has a stepped structure,comprising a first step portion 40 a and a second step portion 40 bconnected to each other. The second step portion 40 b in located on thefirst step portion 40 a, and between the protection layer 19 and the die18, covering a portion of the top surface of the first step portion 40a. The protection layer 19 is located on the first portion 40 a andaside the second step portion 40 b, covering another portion of the topsurface of the first step portion 40 a. The protection layer 19 is incontact with the second step portion 40 b, and is separated from the die18 by the second step portion 40 b therebewteen.

In some embodiments, the top surface of the second step portion 40 b,the top surface of the protection layer 19, and the second surface 18 bof the die 18 are substantially coplanar with each other. The topsurface of the first portion 40 a is lower than the top surface of thesecond step portion 40 b, and is covered by the protection layer 19 andthe second step portion 40 b.

In some embodiments, the protection layer 19 is only formed aside thefirst sidewall 38 a of the die 18, and is not formed aside the secondsidewall 38 b of the die 18. That is to say, the second encapsulant 21 a2 is not in contact with the protection layer 19, and does not have astepped structure. In some embodiments, the top surface of the secondencapsulant 21 a 2 is level with the second surface 18 b of the die 18.

Referring to FIG. 4B and FIG. 5, in some embodiments in which theprotection layer 19 is formed to be in contact with the first sidewall38 a of the die 18, a package structure 50 b is formed. In the packagestructure 50 b, the first encapsulant 21 a 1 and the second encapsulant21 a 2 are asymmetrical with each other. The top surface of the firstencapsulant 21 a 1 is lower than the top surface of the secondencapsulant 21 a 2. The first encapsulant 21 a 1 encapsulates a portionof the first sidewall 38 a of the die 18. The second encapsulant 21 a 2encapsulates the second sidewall 38 b of the die 18. The protectionlayer 19 is on the first encapsulant 21 a 1 and aside the first sidewall38 a of the die 18, covering the top surface of the first encapsulant 21a 1 and a portion of the first sidewall 38 a of the die 18. In someembodiments, the top surface of the protection layer 19, the secondsurface 18 b of the die 18, and the top surface of the secondencapsulant 21 a 2 are coplanar with each other.

In some embodiments in which the encapsulant 21 a is only in contactwith a sidewall of the protection layer 19 (as shown in FIG. 4A), theprotection layer 19 may be removed during the die-saw process, and notremain in the final package structure.

The package structure 50 a/50 b may further connect to other packagecomponents such as a printed circuit board (PCB), a flex PCB, or thelike through the connectors 32.

FIG. 2A to FIG. 2G are schematic cross-sectional views illustrating amethod of forming a package structure according to a second embodimentof the disclosure. The second embodiment differs from the firstembodiment in that a protection layer 119 a is formed. The structuralcharacteristics of the protection layer 119 a are different from thoseof the protection layer 19 in the first embodiment. The details aredescribed as below.

Referring to FIG. 1A and FIG. 2A, after the die 18 is attached to thecarrier 10 though the adhesive layer 12, a protection material layer 119is formed over the carrier 10. In some embodiments, the protectionmaterial layer 119 is a conformal layer, that is, the protection layer119 has a substantially equal thickness extending on the adhesive layer12 and the die 18 over the carrier 10. The protection layer 119 coversthe first surface 18 a and the sidewalls of the die 18, the top surfaceand the sidewalls of the adhesive layer 12. The material and thethickness range of the protection material layer 119 is substantiallythe same as those of the protection layer 19. The protection materiallayer 119 may be formed by a suitable fabrication technique, such asspin coating, chemical vapor deposition, lamination, or the like.

Referring to FIG. 2B, an encapsulant material layer 121 is formed on theprotection material layer 119. The encapsualnt material layer 121 coversthe protection material layer 119 on the top and the sidewall of the die18, and a portion of protection material layer 119 on the adhesive layer12. The material and the forming method of the encapsulant materiallayer 121 are similar to those of the encapsulant material layer 21(FIG. 1B), and is not described again.

Referring to FIG. 2B and FIG. 2C, a planarization process is performedto remove a portion of the encapsulant material layer 121 and a portionof the protection material layer 119, such that the first surface 18 aof the die 18 is exposed, and an encapsulant 121 a and a protectionlayer 119 a are formed. The planarization process includes a grindingprocess, a polishing process or the like, for example. In someembodiments, the top surface of the encapsulant 121 a, the top surfaceof the protection layer 119 a, and the first surface 18 a of the die 18are substantially coplanar with each other.

Referring to FIG. 2C, the protection layer 119 a covers the sidewall andthe top surface of the adhesive layer 12, and the sidewalls of the die18. In some embodiments, the protection layer 119 a is L-shaped. Aportion of the protection layer 119 a on the adhesive layer 12 over theedge 10 a of the carrier 10 is not covered by the encapsulant 121 a, butexposed. The other portion of the protection layer 119 a on the adhesivelayer 12 is sandwiched between the encapsulant 121 a and the adhesivelayer 12. A portion of the protection layer 119 a at the sidewall of thedie 18 is sandwiched between the encapsulant 121 a and the die 18. Inother words, the encapsulant 121 a is located on the protection layer119 a and aside the die 18 and the protection layer 119 a, encapsulatingsidewalls of the protection layer 119 a at the sidewalls of the die 18.The encapsulant 121 a is separated from the die 18 and the adhesivelayer 12 by the protection layer 119 a therebetween. The bottom surfaceof the encapsulant 121 a is higher than the second surface 18 b of thedie 18. In some embodiments, the adhesive layer 12 on the edge 10 a ofthe carrier 10 is completely covered by and in contact with theprotection layer 119 a.

Referring to FIG. 2D and FIG. 2E, processes similar to those describedin FIG. 1F and FIG. 1G are performed, so as to form a polymer layer PM1and a redistribution layer RDL1 on the die 18. The redistribution layerRDL1 includes a seed layer 26 a and a conductive layer 28.

Referring to FIG. 2D, the polymer layer PM1 is formed over the carrier10 and the die 18. In some embodiments in which the polymer layer PM1 isformed by a high spin coating process, the polymer layer PM1 may includea defect region 24 over the edge 10 a of the carrier 10, exposing aportion of the top surface of the protection layer 119 a on the adhesivelayer 12 over the edge 10 a of the carrier 10. The adhesive layer 12 iscovered by the protection layer 119 a, and is not exposed by the defectregion 24. Therefore, the problem may occur during the processes offorming the redistribution layer RDL1 due to the exposed adhesive isavoided.

Referring to FIG. 2F, processes similar to those described in FIG. 1Hare performed, so as to form a RDL structure 30 and a plurality ofconnectors 32. The RDL structure 30 includes polymer layers PM1, PM2,PM3, PM4 and redistribution layers RDL1, RDL2, RDL3, RDL4. The material,the forming method and the structural characteristics of the RDLstructure 30 and the connectors 32 are similar to those of the firstembodiment.

Still referring to FIG. 2F, a structure 150 is thus completed. For thesake of brevity, the inclined portion of the encapsulant 121 a, and aportion of the edge 10 a closest to the end of the carrier 10 and thelayers thereon are not shown in FIG. 2F, it is understood that in theembodiments in which a plurality of dies 18 are placed on the carrier10, the die 18 shown in FIG. 2F is the die adjacent to the edge 10 a ofthe carrier 10.

The structure 150 includes the carrier 10, the die 18 attached to thecarrier 10 though the adhesive layer 12, the encapsulant 121 a, theprotection layer 119 a, the RDL structure 30 and the connectors 32. Thestructure 150 differs from the structure 50 in that the protection layer119 a is located between the encapsulant 121 a and the adhesive layer12, and between the encapsulant 121 a and the die 18, the encapsulant121 a is separated from the adhesive layer 12 and the die 18 by theprotection layer 119 a therebetween. The other structuralcharacteristics of the structure 150 are substantially the same as thoseof the structure 50, which is not described again.

Referring to FIG. 2F and FIG. 2G, processes similar to those from FIG.1H to FIG. 1I are performed, the structure 150 is turned over, thede-bonding layer 11 is decomposed under the heat of light, and thecarrier 10 is then released from the structure 150. In some embodiments,the adhesive layer 12 is then removed by a clean process, and the secondsurface 18 b of the die 18 is exposed. A package structure 150 a is thuscompleted.

Referring to FIG. 2G, the protection layer 119 a and the encapsulant 121a are aside the two sidewalls 38 a and 38 b of the die 18. In someembodiments, the protection layer 119 a and the encapsulant 121 a asidethe first sidewall 38 a of the die 18, and the protection layer 119 aand the encapsulant 121 a aside the second sidewall 38 b of the die 18are symmetrical to each other.

In some embodiments, the protection layer 119 a includes a horizontalportion 119 b and a vertical portion 119 c connected to each other. Thehorizontal portion 119 b is on the encapsulant 121 a and aside thevertical portion 119 c, and covers the top surface of the encapsulant121 a. The vertical portion 119 c is located between the encapsulant 121a and the die 18, and between the horizontal portion 119 b and the die18, covering the sidewall of the encapsulant 121 a and the sidewalls 38a/38 b of the die 18. In some embodiments, the top surface of thehorizontal portion 119 b of the protection layer 119 a and the topsurface of the vertical portion 119 c of the protection layer 119 a arecoplanar with the second surface 18 b of the die 18. The bottom surfaceof the vertical portion 119 c of the protection layer 119 a, the bottomsurface of the encapsulant 121 a, and the first surface 18 a of the die18 are coplanar with each other, and are in contact with the polymerlayer PM1 of the RDL structure 30.

In other words, the encapsulant 121 a is separated from the die 18 bythe protection layer 119 a, and the top surface of the encapsulant 121 ais lower than the second surface 18 b of the die 18, and is covered bythe protection layer 119 a.

In some embodiments, the package structure 150 a may further connect toother package components such as a printed circuit board (PCB), a flexPCB, or the like through the connectors 32.

FIG. 6 is a flow chart of a method of forming a package structureaccording to some embodiments of the disclosure. Referring to FIG. 6, instep S10, an adhesive layer is formed on a carrier. In step S12, a dieis attached to the carrier through the adhesive layer. In step S14, aprotection layer is formed, at least covering a sidewall and a portionof a top surface of the adhesive layer on an edge of the carrier. Instep S16, an encapsulant is formed over the carrier and aside the die.In step S18, a RDL structure is formed on the die and the encapsulant.In step S20, a plurality of connectors are formed and electricallyconnected to the die through the RDL structure. In Step S22, the carrieris released.

In the embodiments of the disclosure, a protection layer is formed atleast on the edge of the carrier. The adhesive layer on the edge of thecarrier is covered and protected by the protection layer or/and theencapsulant. Therefore, even if a defect region of a polymer layer isformed on the edge of the carrier when the polymer layer of the RDLstructure is formed, the problem of seed layer residue that may formedduring the process of forming redistribution layer RDL1 is avoided.

In accordance with some embodiments of the disclosure, a method ofmanufacturing a package structure includes the following processes:providing a carrier; forming an adhesive layer on the carrier; attachinga die to the carrier through the adhesive layer; forming an encapsulantover the carrier to laterally encapsulate the die; forming a polymermaterial over the carrier along a surface of the adhesive layer, asurface of the encapsulant and a top surface of the die, wherein a firstportion of the polymer material directly on an edge of the carrier has afirst thickness larger than a second thickness of a second portion ofthe polymer material directly on the top surface of the die; and forminga redistribution layer penetrating through the second portion of thepolymer material to be electrically connected to the die.

In accordance with alternative embodiments of the disclosure, a methodof manufacturing a package structure includes the following processes:forming an adhesive layer on a carrier; attaching a die to the carrier;forming an encapsulant to laterally encapsulate the die, wherein aportion of the adhesive layer laterally extends beyond a sidewall of theencapsulant and is covered by a protection layer; and forming a polymerlayer on the die, the encapsulant and the protection layer; and forminga redistribution layer to penetrate through the polymer layer andelectrically connect to the die.

In accordance with alternative embodiments of the disclosure, a methodof manufacturing a package structure includes the following processes:providing a carrier; forming an adhesive layer on the carrier; attachinga die to the carrier through the adhesive layer; forming a protectionmaterial layer over the carrier to cover the adhesive layer and the die;forming an encapsulant material layer on the protection material layer;performing a planarization process to remove portions of the encapsulantmaterial layer and the protection material layer over a top surface ofthe die, thereby forming an encapsulant and a protection layer laterallyaside the die; forming a polymer layer on the protection layer, theencapsulant and the die; and forming a redistribution layer penetratingthrough the polymer layer to connect to the die.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the disclosure.Those skilled in the art should appreciate that they may readily use thedisclosure as a basis for designing or modifying other processes andstructures for carrying out the same purposes and/or achieving the sameadvantages of the embodiments introduced herein. Those skilled in theart should also realize that such equivalent constructions do not departfrom the spirit and scope of the disclosure, and that they may makevarious changes, substitutions, and alterations herein without departingfrom the spirit and scope of the disclosure.

What is claimed is:
 1. A method of manufacturing a package structure,comprising: providing a carrier; forming an adhesive layer on thecarrier; attaching a die to the carrier through the adhesive layer;forming an encapsulant over the carrier to laterally encapsulate thedie; forming a polymer material over the carrier along a surface of theadhesive layer, a surface of the encapsulant and a top surface of thedie, wherein a first portion of the polymer material directly on an edgeof the carrier has a first thickness larger than a second thickness of asecond portion of the polymer material directly on the top surface ofthe die; and forming a redistribution layer penetrating through thesecond portion of the polymer material to be electrically connected tothe die.
 2. The method of claim 1, wherein a portion of the adhesivelayer on the edge of the carrier is completely covered by the firstportion of the polymer material and the encapsulant.
 3. The method ofclaim 1, wherein forming the redistribution layer comprises: forming apatterned mask layer over the polymer material, wherein the adhesivelayer on the edge of the carrier is separated from the patterned masklayer by the polymer material therebetween; forming a conductive layerconnected to the die within openings of the patterned mask layer; andremoving the patterned mask layer through a stripping process.
 4. Themethod of claim 3, wherein the stripping process uses a strip chemical,and the adhesive layer is protected by the polymer material from thestrip chemical.
 5. The method of claim 1, wherein an end of the carrierlaterally extends beyond an end of the encapsulant, and the firstportion of the polymer material is laterally aside the end of theencapsulant.
 6. The method of claim 1, wherein a bottom surface of thefirst portion of the polymer material is substantially coplanar with abottom surface of the encapsulant.
 7. The method of claim 1, wherein thepolymer material is formed to cover a sidewall and a portion of a topsurface of the adhesive layer on the edge of the carrier.
 8. The methodof claim 1, wherein forming the polymer material comprises: forming aprotection layer on the edge of the carrier before forming theencapsulant; and forming a polymer layer on the protection layer, theencapsulant and the die after forming the encapsulant, wherein the firstportion of the polymer material comprises the protection layer and aportion of the polymer layer, while the second portion of the polymermaterial comprises another portion of the polymer layer.
 9. A method ofmanufacturing a package structure, comprising: forming an adhesive layeron a carrier; attaching a die to the carrier; forming an encapsulant tolaterally encapsulate the die, wherein a portion of the adhesive layerlaterally extends beyond a sidewall of the encapsulant and is covered bya protection layer; forming a polymer layer on the die, the encapsulantand the protection layer; and forming a redistribution layer topenetrate through the polymer layer and electrically connect to the die.10. The method of claim 9, wherein the protection layer is formed beforeforming the encapsulant to cover the portion of the adhesive layer overan edge of the carrier.
 11. The method of claim 9, wherein the portionof the adhesive layer is separate from the polymer layer by theprotection layer therebetween.
 12. The method of claim 9, wherein aportion of the polymer layer on the sidewall of the encapsulant hasnon-uniform thickness.
 13. The method of claim 9, wherein the protectionlayer is formed to be ring-shaped and overlay the edge of the carrier,and the encapsulant is laterally surrounded by the protection layer whenviewed in a top view.
 14. The method of claim 9, wherein the encapsulantfurther encapsulates a portion of a top surface of the protection layer.15. A method of manufacturing a package structure, comprising: providinga carrier; forming an adhesive layer on the carrier; attaching a die tothe carrier through the adhesive layer; forming a protection materiallayer over the carrier to cover the adhesive layer and the die; formingan encapsulant material layer on the protection material layer;performing a planarization process to remove portions of the encapsulantmaterial layer and the protection material layer over a top surface ofthe die, thereby forming an encapsulant and a protection layer laterallyaside the die; forming a polymer layer on the protection layer, theencapsulant and the die; and forming a redistribution layer penetratingthrough the polymer layer to connect to the die.
 16. The method of claim15, wherein a portion of the protection layer is sandwiched between theencapsulant and the adhesive layer and between the encapsulant and thedie.
 17. The method of claim 15, wherein an edge portion of theprotection layer laterally extends beyond a sidewall of the encapsulantand is sandwiched between the polymer layer and the adhesive layer toseparate the polymer layer and the adhesive layer.
 18. The method ofclaim 15, wherein forming the redistribution layer comprises: forming apatterned mask layer over the polymer layer to define a pattern of theredistribution layer; and forming the redistribution layer withinopenings of the patterned mask layer; and removing the patterned masklayer.
 19. The method of claim 18, wherein a portion of the patternedmask layer fills into a defect region of the polymer layer and incontact with the protection layer, the portion of the patterned masklayer is separate from the adhesive layer by the protection layertherebetween.
 20. The method of claim 15, wherein the protectionmaterial layer is formed to cover a sidewall and a top surface of theadhesive layer.